Study on short failure localization approach by newly developed EBAC technique

Demand of short failure analysis has been increasing in semiconductor failure analysis. It is known from the previous studies that many short failure analysis methods are suggested. However, it is extremely difficult to identify the short failure location in recent advanced devices due to the fact of optical resolution limit. On the other hand EBAC has been noted as the high resolution method to identify an open or a high resistance failure while it is rather difficult for EBAC to identify a short failure. In this study we have developed a new EBAC amplifier and evaluated a short failure case for identifying the location clearer enough than conventional analysis methods. This paper describes successful use of the new EBAC amplifier which has sufficient enough resolution of EBAC signal to identify the failure locations for next step physical analyses of FIB, STEM or so on.