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150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors
150 nm × 200 nm Cross‐Point Hexagonal Boron Nitride‐Based Memristors
2020
Bin Yuan
Xianhu Liang
Liubiao Zhong
Yuanyuan Shi
Felix Palumbo
Shaochuan Chen
Fei Hui
Xu Jing
Marco A. Villena
Lin Jiang
Mario Lanza
Keywords:
cross point
power consumption
Nanolithography
Memristor
Materials science
Optoelectronics
hexagonal boron nitride
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