Metal nanoparticles in dielectric media: Physical vapor deposited HfO2 & Ag multilayers for MOS device and SPR applications

Multilayered films of Hafnium Oxide & Silver are grown using e-beam evaporation system and then they are annealed at different temperatures. UV-VIS-NIR absorption spectra shows the Surface Plasmon Resonance(SPR) at707 nmfor as grown sample (room temperature) and a huge shifted SPR at 542 nm for the sample annealed at 400°C. FESEM confirms the increase in the particle size and EDX confirms the presence of Ag. From the IV-CV measurements, it is clear that these samples are having a wide charge storage window of about 2volts in as deposited sample which decreases with increase in the annealing temperature.