Electromigratoin and thermal fatigue in Cu mentallization for ULSI

We researched damage formation and failure mechanism under DC(direct current) and AC(alternative current) in order to estimate reliability of Cu interconnects in ULSI. Higher current density and temperature induces more short TTF(time to failure) during interconnects carry DC. Measurement reveals that Cu electromigration has activation energy of 0.96eV and current density exponent value of 4. Thermal fatigue is occurred under DC, and higher frequency and T value gives more severe damage during interconnects carry AC Through failure morphology analysis with respect to texture, we observed that damages had grown widely and facetted grains had appeared in (100)grain but damages in (111) had grown thickness direction of line and had induced a failure rapidly.