Local interconnect having a low profile and methods of making the same

Embodiments of the present invention provide a structure. The structure includes a plurality of field effect transistors having gate stacks formed on the top surface of a semiconductor substrate, said gate stack having spacers which are formed on the same side walls; and one or more conductive contacts that are formed directly on the upper surface of the semiconductor substrate and at least one source / drain of one of the plurality of field effect transistors to connect at least one source / drain of another of the plurality of field effect transistors, said one or more conductive contacts a part of a local interconnect having a low profile are having a height which is less than a height of the gate stacks.