MBE growth and characterization of HgTe based quantum wells and superlattices

Abstract The MBE growth of type III HgTe/Hg 1− x Cd x Te heterostructures will be discussed. Spin–orbit (s–o) coupling is particularily large in HgTe based quantum wells; the observed value of 17 meV is at least two to three times larger than values reported in the literature for III–V heterostructures or any other system. Rashba spin–orbit splitting in n type modulation doped quantum wells (QWs) has been investigated as a function of the 2DEG density and compared with self-consistent Hartree calculations based on an 8×8 k · p model. Furthermore the presence of two periodic SdH oscillations in p type QWs with an inverted band structure has been observed and is the first direct evidence that these heterostructures are indirect semiconductors.