Asymmetric inverse waveguide large optical cavity semiconductor laser structure

The invention discloses an asymmetric inverse waveguide large optical cavity semiconductor laser structure, belonging to the technical field of semiconductor photo-electronic devices. Electro-optic efficiency and output power of the laser are limited as the known technology in the field is difficult to reduce series resistance and carrier leakage while reducing optical limiting factors of a laser waveguide, increasing effective waveguide width and reducing waveguide loss. The waveguide layer of the asymmetric inverse waveguide large optical cavity semiconductor laser adopts an asymmetric inverse linear graduated refractive index structure, so that the optical limiting factor of the laser waveguide is decreased efficiently, effective waveguide width is increased, carrier absorption loss and series resistance of the waveguide are reduced, and meanwhile the leakage of quantum well carriers is avoided. The technical scheme can be applied to manufacturing of various types of high-power semiconductor lasers.