Banks Lake Fish Survey, September 2000

A method is provided for forming adhesion/barrier/conductor layers on semiconductor wafers in vias by using a high temperature adhesion/barrier material deposition step. The adhesion/barrier material is deposited over a channel conductor in the semiconductor dielectric with the semiconductor wafer at high temperature over 400° C., the temperature is reduced below 150° C., and then seed material is deposited so it is not exposed to temperatures above 150° C. which cause agglomeration.