High mobility p-channel HFETs using strained Sb-based materials

Antimonide-based p-channel HFETs with a 0.25 mum gate length have been fabricated with an InAlSb/AlGaSb barrier and a strained In 0.41 Ga 0.59 Sb quantum well channel. The modulation-doped material exhibits a Hall mobility of 1020 cm 2 /Vs and a sheet density of 1.6 x 10 12 cm -2 . The devices have a maximum DC transconductance of 133 mS/mm and an f T and f max of 15 and 27 GHz, respectively. These values are the highest reported to date for this material system.