Accurate characterization of MOSFET overlap/fringing capacitance for circuit design

In this paper we present a new, accurate method to characterize MOSFET overlap/fringing capacitance C/sub of/. Existing methods determine C/sub of/ independent of the intrinsic gate capacitance, and so do not model total gate capacitance C/sub g-sdb/ correctly. Our method determines C/sub of/ to fit C/sub g-sdb/ optimally, which is the proper goal of C/sub of/ characterization for circuit design. We also present test structures, measurement techniques, and results of both C-V and s-parameter measurements. >