Manufacturing method of nanowire and diode comprising nanowire munufactured using the same

The present invention provides a manufacturing method of a nanowire which can uniformly and economically manufacture a nanowire in a desired size and a high-crystalline structure in short time, and a diode comprising the nanowire manufactured using the same. By applying the high-crystalline nanowire manufactured using the manufacturing method to an optical device, a photoelectric device, a transistor, a memory device, or other devices in various fields, the quality and the efficiency of the devices can be improved.