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30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge
30 A / 900 V AlGaN/GaN-on-Si Double-Packaged Schottky Barrier Diodes with Controlled Passivation Edge
2020
Jeho Na
Hyung-Seok Lee
Jun Chi-hoon
Hyun-Gyu Jang
Kim Zin-Sig
Sang-Choon Ko
Woojin Chang
Mun Jae Kyoung
Eun Soo Nam
Keywords:
algan gan
Schottky barrier
Optoelectronics
Passivation
Diode
Edge (geometry)
Materials science
Correction
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