Temperature Dependence of Exciton Spin Relaxation Rates in Semiconductor Quantum Dots

We have studied temperature dependence of the signals of optical orientation of excitons at resonant excitation of the ensemble of planar self‐assembled CdSe/ZnSe quantum dots and show that spin memory in this system survives up to 100K. To describe the experimental results we apply the model that considers explicitly the effect of multi‐phonon processes on the broadening of bright‐exciton‐phonon sublevels and demonstrate that calculated temperature dependences of spin relaxation rates are in good agreement with obtained experimental data.