GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

Abstract We report on the growth of fully relaxed and smooth GaSb layers with reduced density of threading dislocations, deposited on GaAs substrate. We prove that three parameters have to be controlled in order to obtain applicable GaSb buffers with atomically smooth surface: interfacial misfit (IMF), the etch pit density (EPD) and the growth mode. The GaSb/GaAs interfacial misfit array and reduced EPD ≤1.0 × 10 7  cm −2 were easily obtained using As-flux reduction for 3 min and Sb-soaking surface for 10 s before the GaSb growth initiation. The successive growth of GaSb layer proceeded under the technological conditions described by the wide range of the following parameters: r G  ∈ (1.5 ÷ 1.9) A/s, T G  ∈ (400 ÷ 520)°C, V/III ∈ (2.3 ÷ 3.5). Unfortunately, a spiral or 3D growth modes were observed for this material resulting in the surface roughness of 1.1 ÷ 3.0 nm. Two-dimensional growth mode (layer by layer) can only be achieved under the strictly defined conditions. In our case, the best quality 1-μm-thick GaSb buffer layer with atomically smooth surface was obtained for the following set of parameters: r G  = 1.5 A/s, T G  = 530 °C, V/III = 2.9. The layer was characterized by the strain relaxation over 99.6%, 90° dislocations array with the average distance of 5.56 nm, EPD ∼8.0 × 10 6  cm −2 and 2D undulated terraces on the surface with roughness of about 1 ML. No mounds were observed. We belive that only thin and smooth GaSb layer with reduced EPD may be applied as the buffer layer in complex device heterostructures. Otherwise, it may cause the device parameters deterioration.