Improvement of high-field Jc of MgB2 wires by polymethyl-methacrylate doping

Abstract We applied polymethyl-methacrylate (PMMA) as a new doping material for MgB 2 and fabricated C-doped MgB 2 wires by in situ powder-in-tube (PIT) process. With increasing PMMA doping level, the transition temperature ( T c ) decreased and the MgO content increased, whereas the magnetic field dependence of the critical current density ( J c ) weakened. The MgB 2 wires doped with 3–10 wt.% PMMA showed significantly higher J c by more than one order of magnitude than that of the undoped wire at 5 K and 6.6 T. These results confirmed the potential of PMMA as a promising material for the effective substitution of B by C in MgB 2 .