Highly strained pseudomorphic InxGa1−xAs/AlAs based resonant tunneling diodes grown on patterned and non-patterned GaAs(100) substrates

Abstract Resonant tunneling diodes (RTDs) with strained well and spacer regions made of In x Ga 1- x As alloys or (InAs) M / (GaAs) N short period multiple quantum well (SPMQW) have been fabricated on GaAs(100) substrates. With increasing x , the presence of strain results in generation of misfit dislocations and/or change to three-dimensional island mode of growth, both detrimental to the performance of the RTDs. Consequently, a systematic study of the electrical and structural properties of RTDs with 0.10 ≤ x ≤ 0.33 was carried out with emphasis on control of the growth kinetics. This has led to RTDs with (InAs) 1 /(GaAs) 2 wells having room temperature peak to valley ratios (PVR) of 4.7 with peak current densities ( J p ) of 125 kA/cm 2 . This is the first time that devices grown on GaAs substrate without any thick strain relieving intermediate layers have shown simultaneously high PVRs and J p .