Optimum lifetime structuring in silicon power diodes by means of various irradiation techniques

Abstract Application of radiation defects for adjustment of power diode parameters is demonstrated. Local lifetime control (LLC) by proton and alpha-particle irradiation with energies 1.8–12.1 MeV is compared with uniform lifetime killing by 4.5 MeV electrons. The influence of both the techniques on static and dynamic parameters of modified diodes is experimentally established and explained by means of state-of-the-art simulation system. Optimization means and limits of lifetime control by irradiation techniques are discussed, as well.