Закономерности влияния ионного облучения на фотолюминесценцию нанокристаллов кремния в матрице SiO 2

The article studies the effect of ion irradiation on luminescent properties of silicon nanocrystals in SiO 2 matrix obtained by Si + ion implantation or by deposition of multilayer SiO/SiO 2 structures with subsequent annealing, as well as the oxidation of porous silicon. The degree of photoluminescence quenching is shown to decrease with the increase of the ion mass, this regularity being dependent on the spatial organization of nanocluster ensembles and their interface with the matrix.