FDSOI NCFET with Stepped Thickness Ferroelectric Layer

In this work, a novel structure of FDSOI Negative Capacitance FET (NCFET) with Stepped Thickness Ferroelectric Layer (STFL) is proposed. The STFL forms an ununiform electrostatic potential distribution on the gate oxide, which modulates the electric characteristics of NCFET. The capacitances, transfer characteristics, output characteristics, and Sub-threshold Swing (SS) are investigated. The SS of STFL FDSOI NCFET can be reduced to 49mV/dec, shows a better performance when compared to the conventional FDSOI NCFET with equal ferroelectric layer.