High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy

The invention discloses a high-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy. The device comprises an inner water jacket assembly, a gas inlet assembly and a mounting flange which are sequentially coaxially nested from inside to outside, wherein the gas inlet assembly comprises multiple layers of gas inlet rings and sealing rings which are coaxially nested in a spaced manner, the multiple layers of gas inlet rings are elongated layer by layer from outside to inside, a gas inlet is formed in the top end of each gas inlet ring, the tail end of each gas inlet ring is folded outwards in the radial direction to form a flared folded surface, the sealing rings are welded to the peripheries of the gas inlets and arranged on the outside of the mounting flange, the sealing rings are spaced and the sealing ring on the outermost layer and the mounting flange are also spaced. The device has the benefits as follows: welding seams formed between each sealing ring and the corresponding gas inlet ring are exposed out of the outer surface of the gas inlet device and are convenient to maintain; the sealing rings are arranged in a spaced manner, so that repair welding is facilitated.