High-efficiency Class-F −1 power amplifier design with input harmonic manipulation

This paper presents the design and realization of a high-efficiency Class-F −1 power amplifier, in which the input second harmonic effect is emphasized for the efficiency enhancement. Through the numerical analysis and device-model-based simulation, the optimum manipulation of input and output harmonic terminations are carried out. Following this knowledge, a 3.5-GHz Class-F −1 power amplifier with an accurate input harmonic control was fabricated using a commercial high power GaN HEMT. The experimental results show that a maximum power-added-efficiency (PAE) of 76.7% with 39.9dBm output power (P out ) and 12.9dB gain is achieved.