Fabrication and characterization of advanced through glass via interconnects

Abstract This work presents the fabrication process, electrical characteristics, and circuit model of through glass via (TGV) structures consisting of TGV holes with each diameter of 100 μm and different conductors including copper and composite in the frequency range of 300 kHz to 20 GHz. The Cu/NiFe superlattice metaconductors in combination with high-quality glass (Corning SGW3) are intended to reduce radio-frequency losses especially in 10 GHz and above for next generation communication applications such as 5G communications. The measured results of the copper structure are compared to simulated results. Superlattice metaconductor results will be presented. Based on the simulation and measurement results, a circuit model is demonstrated.