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Investigation of Drain Current Transient Behavior by Step Gate Bias in Polysilicon Channel Device
Investigation of Drain Current Transient Behavior by Step Gate Bias in Polysilicon Channel Device
2017
Sangho Lee
Dae Woong Kwon
Seung Hyun Kim
Sang-Ku Park
Myung Hyun Baek
Byung-Gook Park
Keywords:
Channel length modulation
Drain-induced barrier lowering
Metal gate
Polysilicon depletion effect
Grain boundary
Electronic engineering
Materials science
Communication channel
Optoelectronics
drain current
Correction
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