Metal-semiconductor-metal photodetectors on intermediate temperature MBE grown GaAs for lightwave/millimeter-wave applications

Intermediate growth temperature (IGT) GaAs Metal-Semiconductor-Metal (MSM) photodetectors enable an optimal combination of large dynamic range and speed. In addition these devices are suitable for monolithic integration. The static and temporal response of GaAs MSMs grown by Molecular Beam Epitaxy (MBE) at 350/spl deg/C has been measured.