Preparation and properties of GaN nanostructures by post-nitridation technique

Abstract Nanostructure GaN films were prepared by post-nitridation technique. The morphology and structure of GaN nanowires are investigated by using transmission electron microscopy and scanning electron microscopy. The growth mechanism of the GaN nanowires is unlikely to be controlled by the well-known vapor–liquid–solid mechanism, vapor–solid phase was involved in the growth of GaN nanostructures. A strong blue photoluminescence is observed for room temperature measurement.