Location optimize of press-pack IGBT chip

In this work, we optimize the chip's location of press-pack IGBT from the point of view of multiple physical fields. First, based on the actual structure of the press-pack IGBT device, the multiple physical field model was established to analyze of Electro-thermal-mechanical coupling model by finite element method. The results show current distributions of chips is closely relative to locations of chips. And uneven current distribution leads to the difference of chip power, which means that junction temperature and stress are not the same. So we put forward a new method to evaluate thermal performance. To address this issue, device with annular distributed chips is proposed. According to simulation results, electro-thermal performance gets great improvement.