ε-Ga 2 O 3 epilayers as a material for solar-blind UV photodetectors

Abstract Electrical and optical properties of undoped single-phase e-Ga 2 O 3 epitaxial films prepared by MOCVD are reported. It is shown that this still unexplored polymorph of gallium oxide possesses wide bandgap and very high dark resistivity, thus allowing the design and fabrication of solar-blind UV photodetectors. Simple cost-effective photoresistors, fabricated by direct deposition of the epilayers on c -oriented sapphire substrates, exhibited good performance. The physical properties and the photoresponse of e-Ga 2 O 3 make this material very interesting in view of novel applications.