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Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET
Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET
2013
Bin Wang
Heming Zhang
Huiyong Hu
zhangyuming
Chunyu Zhou
Yuchen Li
Keywords:
Strained silicon
Electronic engineering
Plateau
Materials science
Optoelectronics
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