Simulation and analysis of Si GAA nanowire Tunneling FET

This paper studies the Silicon Tunneling Field Effect Transistor (TFET) where p-i-n configuration of doping has been used. The device has been compared with the emerging GAA Nanowire FET for drain current characteristics. The characteristics of sub threshold region has been studied for different radii and gate lengths of the device. The surface potential of the device has also been studied along with the electric field.