Electrical properties of semiconducting CuGa0.5In0.5Se2 thin films

CuGa x In 1-x Se 2 crystallizes in the chalcopyrite structure and is a potential absorber material for the fabrication of heterojunction solar cells. In this paper the electrical properties of CuGa 0.5 In 0.5 Se 2 polycrystalline thin films, prepared by thermal evaporation method, have been investigated. The resistivity and the thermoelectric power was measured in the temperature range 300 to 475 K and the conductivity , carrier (hole) and mobility activation energies were determined. Variation of these parameters exhibit exponential dependence on the inverse temperature which are indicative of grain boundary scattering mechanism.