Strain-confined wires and dots at a GaAs/AlxGa1-xAs interface

Abstract We have observed lateral exciton confinement at the GaAs/Al x Ga 1-x As interface. The confinement is achieved in both the growth and lateral directions by the strain potential under an amorphous carbon stressor. The potential welt varies from 15 meV to 40 meV for different stressor sizes. We have also made transient measurements on this structure, which show efficient exciton transfer from the bulk GaAs to the confined region.