Stark effect of shallow impurities in Si

The field of atomic scale electronics (ASE) aims at controlling charge and spin in semiconductors at the level of individual dopant atoms. Such an ability is very attractive, both for physics and for the development of (quantum) devices. From a fundamental point of view, dopant atoms are interesting, because they can be considered as the solid state analogue of atoms in free space. Several well-known effects from atomic physics (e.g. the Stark effect and Zeeman effect) have been studied in great detail in large ensembles of dopant atoms 1 . The prospect of experimentally realizing atomic scale electronics has renewed the interest in dopant atoms. Measurement and control of individual dopant atoms allows for the observation of quantum coherent time evolution and interactions of the dopant’s wave functions, which is essential for the operation of a quantum computer.