The importance of the native oxide for sub-keV ion implants

With the emergence of production capability for sub-keV ion implant, aspects of the process that were never important before start to play a central role. This paper demonstrates the effects of native oxide on the dopant profiles that result from sub-keV implants. The native oxide has a strong influence via several mechanisms: dopant deposition into the oxide, scattering of the incident beam by the oxide and changes to the beam backscatter. These effects are very important for process designers working in the sub-keV regime.