Plasma nitriding method, a manufacturing method and a plasma processing apparatus of a semiconductor device
2006
The silicon in the process vessel at the surface of the object of the plasma treatment apparatus, microwave-excited high-density plasma of a nitrogen-containing gas formed by introducing the microwaves into the processing chamber through a planar antenna having a plurality of slots It was allowed to act, the nitriding treatment at 500 ° C. or higher processing temperatures.
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