Deposition of Gallium Nitride Films using Ammonia and Triethylgallium Seeded Helium Beams

Gallium nitride films have been deposited on Si(100) and Al{sub 2}O{sub 3}(0001) substrates using triethylgallium and ammonia seeded into highly expanded helium gas streams. A two step deposition process that reproducibly results in continuous crystalline GaN films has been developed. The microstructure and composition of the resultant films were characterized by scanning electron microscopy, reflection high energy electron diffraction and Auger electron spectroscopy and film character was correlated to deposition conditions.