Excitation wavelength and intensity dependence of luminescence decay in a-Si(H)

Abstract We present results on the dependence of the initial luminescence decay in hydrogenated amorphous Si on temperature, excitation photon energy and excitation intensity. We find that the initial decay becomes faster with increasing temperature and excitation intensity but slower with increasing excitation phonon energy. The total luminescence intensity varies sublinearly with excitation intensity at high intensities, showing that nonradiative processes become more important at high intensities. These results are discussed in terms of current models.