Phase change nonvolatile memory and processing method thereof

The present invention provides a method for processing a phase-change nonvolatile memory, comprising the steps of: forming an N-type silicon substrate, forming a silicon oxide layer over the N-type silicon substrate, the silicon oxide layer is engraved in recess etching silicon oxide; epitaxially grown intrinsic silicon layer is deposited on an N type silicon substrate, the silicon oxide groove; on the intrinsic silicon layer is deposited epitaxially grown p-type silicon layer is deposited; p-type silicon is deposited an epitaxial layer grown on the SiGe layer; on the silicon germanium layer grown epitaxially depositing a further layer of intrinsic silicon layer; epitaxially grown intrinsic silicon layer is deposited is removed by etching the silicon germanium layer is in a silicon oxide the most one groove; phase change material layer deposited on a silicon germanium layer. Process of this invention, such that during the deposition of the intrinsic silicon is removed by etching, the etching of the silicon germanium layer is not etched after the end of intrinsic silicon is deposited, thereby also avoiding the silicon germanium layer below the etching through the p-type silicon layer is deposited.