A potential integrated low temperature approach for superconducting MgB/sub 2/ thin film growth and electronics device fabrication by ion implantation

By implanting high fluence B into Mg targets, we demonstrate clearly that superconducting MgB/sub 2/ thin films can be formed at a low process temperature. The superconducting transition temperature T/sub c/ values observed are dependent on the growth condition. The ion beam synthesis experimental data are discussed and compared with simulation results of the B implantation process in Mg target. We propose that ion beam synthesis of MgB/sub 2/ is a potential approach for the mass production of superconducting electronics devices.