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Experimental 27 ns 1 Mb CMOS high-speed DRAM
Experimental 27 ns 1 Mb CMOS high-speed DRAM
1989
Sang Hoo Dhong
W. H. Henkels
Nicky Chau-Chun Lu
Roy Edwin Scheuerlein
Gary B. Bronner
K. Kitamura
Yasunao Katayama
H. Niijima
Toshiaki Kirihata
R.L. Franch
Wei Hwang
M. Nishiwaki
F. L. Pesavento
T.V. Rajeevakumar
Y. Sakaue
Y. Suzuki
E. Yano
Keywords:
Electrical engineering
Electronic engineering
Computer science
CMOS
Dram
Correction
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