Substrate processing method

The present invention relates to a substrate processing method capable of innovatively improving contact resistance by removing a damage layer and natural oxide film of a bottom surface of a contact hole. According to the present invention, the substrate processing method includes a condensed film forming step of forming a condensed film by supplying HF gas and NH3 gas to a silicon substrate on which the contact hold is formed and then reacting the gases with the natural oxide film formed on the bottom surface of the contact hole, a damage layer removing step of etching a lower silicon layer of the condensed film by supplying one of F2 gas, XeF2 gas, and CIF3 gas to the substrate while a bias is applied to a substrate support member on which the substrate is placed, and a condensed film removing step of removing the condensed film.