Voltage control of millimeter-wave ferromagnetic resonance in multiferroic heterostructures thin films

Abstract Multiferroic heterostructures thin films, SrBi2Ta2O9/BaFe12O19 (SBT/BaM), were grown on Pt/TiO2/SiO2/Si substrates by using magnetron sputtering and Sol-gel ways. X-ray diffractometer (XRD) analysis showed that only SBT and BaM phases appeared in the multiferroic heterostructures. Magnetic hysteresis loops revealed that the saturated magnetization was 3.7 kG and the M-H characteristics of SBT/BaM were not influenced by the presence of the SBT layer. Ferromagnetic resonance (FMR) measurement showed the lowest FMR linewidth of 205 Oe at 50 GHz. Additionally, when direct-current electric field was applied to SBT layer, as a result of which mechanical deformation of the ferromagnetic layer occurred that leads to a frequency shift in ferromagnetic resonance and the magnetoelectric coupling effect (α) is 1.8 MHz*cm/kV. Our findings indicate that these SBT/BaM thin films have a significant potential for the usage in millimeter wave tunable devices.