Old Web
English
Sign In
Acemap
>
Paper
>
An Aluminum Gate Chemical Mechanical Planarization Model for HKMG Process Incorporating Chemical and Mechanical Effects
An Aluminum Gate Chemical Mechanical Planarization Model for HKMG Process Incorporating Chemical and Mechanical Effects
2014
Qinzhi Xu
Lan Chen
Keywords:
Chemical-mechanical planarization
Aluminium
Inorganic chemistry
Chemistry
Nanotechnology
Correction
Source
Cite
Save
Machine Reading By IdeaReader
37
References
16
Citations
NaN
KQI
[]