Method for forming aluminum contact

PURPOSE: To improve the coating state of a contact via by appropriately selecting a fire-resistant metallic layer and the attachment condition of aluminum, at the time of forming the fire-resistant metallic layer on a barrier layer, and attaching and forming aluminum on this. CONSTITUTION: After a thin titanium layer 24 has been attached and formed on a device, a wafer is moved to an aluminum attachment chamber, and thin aluminum is attached at a low temperature of 0-300 deg.C. Next, the wafer is moved to another chamber having a high temperature of about 400-550 deg.C without destroying vacuum. Immediately, the aluminum is attached and formed at a relatively low attaching speed between about 20 Å/second and 50 Å/second. As a result, a further thick aluminum layer 26 is formed, and an opening 14 is packed with the layer, and a flat layer is formed across a whole chip. Thus, a coverage, that is, coating state for a contact via can be improved.