Influence of arsenic concentration on the surface morphology and photoluminescence of LPE grown AlGaAsSbGaSb with high aluminium content

Abstract High quality layers of Al 0.82 Ga 0.18 As y Sb 1 − y have been grown on GaSb substrates by the liquid phase epitaxial (LPE) technique. The effect of arsenic incorporation at various growth temperatures on the surface morphology, lattice mismatch and photoluminescence has been studied. The quality of the epilayers has been found to depend strongly on the pre-growth melt dissolution sequence and improves with increase in growth temperature. Perfectly lattice matched epilayers with excellent optical properties could be grown at 650°C.