Transient Behaviour of Intrinsic Gettering in CZ Silicon Wafers

The transient behaviour of intrinsic gettering (IG) is clarified for the first time on the silicon wafer with surface defects introduced by the prc-annealing in wet 0, at 1140 °C. It is found that surface defects introduced by the pre-annealing in O2 at higher temperatures, which are speculated to be heavy metal clusters in this work, migrate to an inner region and are gettered by inner defects during the post-annealing at lower temperatures such as 950 °C. These results suggest that surface defects introduced by pre-oxidation process can be gettered during device heat treatment at comparatively lower temperatures if microdefect nuclei are suitably given.