Recombination lifetime of InxGa1−xAs alloys used in thermophotovoltaic converters

The family of ternary compounds of composition InxGa1−xAs are of considerable interest for thermophotovoltaic energy converters. The recombination lifetimes of the various compositions are critical to the successful application of these materials as efficient converters. Here we will describe experimental results on the composition, In0.53Ga0.47, that is lattice-matched to InP. We will also describe lifetime results on the compositions In0.68Ga0.32As, with a bandgap of 0.60 eV to compositions In0.78Ga0.22As with a bandgap of 0.50 eV. Double heterostructure confinement devices have been made over a range of both n- and p-type doping. These results are preliminary, but the goal is to obtain the radiative and Auger recombination coefficients for the alloys in this composition range.