Low energy electron emission from surface-interface states of SiO2:Ge films

In this paper we present the results of optically stimulated electron emission (OSEE) investigation of thin SiO2 films implanted with Ge+ ions. The emission models of Urbach rule and power Kane-dependence are used to fit OSEE spectra at different excitation energy ranges. The materials under study may find a number of technological applications in optical devices and ultraviolet sensors. Samples attestation was performed by electron microscopy and x-ray photoelectron spectroscopy (XPS). XPS data revealed strong dependence between the Si, Ge and O atoms state and annealing time. Observed correlations between parameter values of Urbach- and Kane-related models suggest the implantation-induced changeover of both the vibronic subsystem and energy band structure.