Dielectric pockets – a new concept of the junctions for deca-nanometric CMOS devices
2000
A new concept of dielectric pockets is proposed allowing suppression of short-channel effects (SCEs) and DIBL without increasing the channel doping. The dielectric pockets have been implanted into 0.15- m PMOS devices showing substantial efficiency in reducing SCE and current without altering the current drive. The dielectric pockets thus embody the ideal pocket architecture.
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