Luminescence Studies of Residual Damage in Low‐Dose Arsenic Implanted Silicon after High‐Temperature Annealing

In order to prevent the degradation of device performance, it is necessary to detect and reduce residual damage remaining after ion implantation and annealing. In this study, we focused on the high‐temperature annealing process after low‐dose arsenic (As) implantation in silicon (Si) and evaluated the correlation of annealing conditions and damage by cathodoluminescence (CL) compared to Secondary Ion Mass Spectrometry (SIMS) and Junction Photo‐Voltage (JPV) results. Increasing the annealing temperature with the high‐heat‐up rate, As profile and the sheet resistance didn’t change. However, the intensity of the band‐to‐band transition increased with temperature. This implies the some kind of residual damage remains after low‐temperature annealing and it is removed with increasing annealing temperature. On the other hand, with increasing the annealing time at 1200 °C, more As was piled‐up at the SiO2/Si interface and the luminescence intensity decreased. We guess this piled‐up As is inactive and it may creat...