Impurity doping properties of hydrofluorinated amorphous silicon produced by intermediate species SiF2

Electrical and optical properties of boron‐ or phosphorus‐doped new hydrofluorinated amorphous silicon (a‐Si:F:H) are experimentally studied. This new a‐Si:F:H is produced by using intermediate species SiF2 and H2 gas mixture instead of using SiH4 gas or SiF4 and H2 gas mixture. It is found that the doping efficiency for boron or phosphorus in this a‐Si:F:H film is slightly better than that of conventional hydrogenated amorphous silicon (a‐Si:H), and also that the optical band gap of this a‐Si:F:H hardly changes for the increase of conductivity due to boron doping while that of a‐Si:H is apparently decreased.